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窒化ガリウム
1. gallium nitride
2. Gallium nitrideGallium nitride is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
Read “Gallium nitride” on English Wikipedia
Read “窒化ガリウム” on Japanese Wikipedia
Read “Gallium nitride” on DBpedia
Read “Gallium nitride” on English Wikipedia
Read “窒化ガリウム” on Japanese Wikipedia
Read “Gallium nitride” on DBpedia
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