深堀りRIE
1. Deep reactive-ion etchingDeep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios . It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through wafer via's's in advanced 3D wafer level packaging technology .
Read “Deep reactive-ion etching” on English Wikipedia
Read “深堀りRIE” on Japanese Wikipedia
Read “Deep reactive-ion etching” on DBpedia
Read “Deep reactive-ion etching” on English Wikipedia
Read “深堀りRIE” on Japanese Wikipedia
Read “Deep reactive-ion etching” on DBpedia
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