1. P–n junctionA p–n junction is formed at the boundary between a p-type and n-type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant).
Read “P–n junction” on English Wikipedia
Read “Pn接合” on Japanese Wikipedia
Read “P–n junction” on DBpedia
Read “P–n junction” on English Wikipedia
Read “Pn接合” on Japanese Wikipedia
Read “P–n junction” on DBpedia
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