ショットキー接合
1. Schottky barrierA Schottky barrier, named after Walter H. Schottky, is a potential barrier formed at a metal–semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p–n junction are its typically lower junction voltage, and decreased (almost nonexistent) depletion width in the metal. Not all metal–semiconductor junctions form Schottky barriers.
Read “Schottky barrier” on English Wikipedia
Read “ショットキー接合” on Japanese Wikipedia
Read “Schottky barrier” on DBpedia
Read “Schottky barrier” on English Wikipedia
Read “ショットキー接合” on Japanese Wikipedia
Read “Schottky barrier” on DBpedia
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